1). Will we snap back to the old ways of doing business or will we see a substantial bump in the use of technology to conduct our lives?”. GaN chips are capable of boosting the amplification of microwave signals and they also carry a higher voltage than traditional semiconductor materials like silicon, allowing them to consume less power and produce less heat. GaN chips are capable of boosting the amplification of microwave signals and they also carry a higher voltage than traditional semiconductor materials like silicon, allowing them to consume less power and produce less heat. The building-block approach taken in these standards optimizes the balance. Teams are working on VPX enhancements as mentioned, but others are working on system management, reliability, mezzanine cards, modules for space applications, and circular connectors. NS200 is the larger version of the NS100, which is in full series production. While VITA may use more virtual-only meetings, at the same time we hope to be back conducting in person face-to-face meetings by July or September. All in service AESAs use gallium arsenide as the material in the t/r elements. Much of the technology developed on VITA standards ends up in defense applications. We were able to get eight standards through the VITA/ANSI process in 2020, including ANSI/VITA 46.30 and VITA 46.31, which enabled extending the data rate of VPX to the next level of at least 25 Gbaud for protocols such as 100GBASE-KR4 Ethernet and PCIe Gen 4. Unfortunately, the complexity of standards is an increasing challenging for even the most experienced and advanced of the engineering teams. A key focus of much of those efforts is trying to strike a balance between flexibility in design options with a push to converge on well-defined configurations. Over the last decade, gallium-nitride (GaN) semiconductors have become a staple in radar technology. In addition to more transmit and receive modules, NS200 uses newer and more powerful Gallium Nitride (GaN) technology. The new generation of the Patriot system is scheduled to enter production early next year. Wide bandgap GaN technology has distinct advantages of higher voltage and broader bandwidth performance combined with high drain efficiency. The company has spent 17 years researching gallium-nitride for Patriot missile radar, but the technology's potential stretches much further than that. A light emitting diode comprising a first layer of gallium nitride, a second, substantially intrinsic layer of magnesium doped gallium nitride forming a junction therewith, a metallic rectifying contact to the second layer, an ohmic contact to the first layer, and means for applying a voltage across said contacts and said junctions whereby to bias the device and generate light. Another challenge met in 2020 was the release of additional ANSI/VITA 67 coaxial interconnect on VPX standards. This work complements the configurations defined under various VITA 66 VPX optical standards. VITA standards meetings since last March have been virtual and well-attended while also very productive. The Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) has been considered primary technology for realizing solid state high power, high-frequency power amplifiers. We look forward to celebrating this historic milestone in embedded computing!